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PS overview
PS details
PROPOSAL AT A GLANCE
Proposal name:
Ge Nanophotonics Epitaxy on Si Substrates; Physics and Devices (GENESIS)
Subject:
Development and industrialisation of efficient optical modulator for advanced Si-photonics and telecommunication based on Ge-quanten wells by exploring the Ge’s direct bandgap features such as the excitonic enhancement, high oscillator strength, Stark tuning, and optical spin injection.
PROJECT DESCRIPTION
Proposal Outline:
We aim to investigate in depth the potential of SiGe heterostructures comprising pure Ge nanolayers integrated on Si substrates for Si-photonics and Si based opto-electronic applications. The action is focused on the delivery of the first high speed light modulator offering a sufficient optical band gap for light modulation in fiberoptics communication including efficient manufacturing and processing technologies ready for commercialization.
Keywords:
Si photonics, Si opto electronic, optical modulator, SiGe waveguide structures
PARTNER PROFILE SOUGHT
Required skills and Expertise:
Expert in exploration, fabrication and industrial implementation of (Si-based) opto-electronic components for photonic and telecom applications.
Description of work to be carried out by the partner(s) sought:
Contributions to the device requirements definition. Help to substantiate the project results towards future Si-based opto-electronic components.
Type of partner(s) sought:
Industrial end-user active in the field of (Si-based) opto-electronic components. Interested in the implementation of Si based opto-electronic components.
The Proposer is looking for a Coordinator:
No
PROPOSER INFORMATION
Organisation:
Paul Scherrer Institut
Department:
Micro Nanotechnology
Type of Organisation:
Research Center
Country:
Switzerland
